美国哥伦比亚大学郝玉峰博士来访

2015-1-25 19:21:53

报告题目CVD Growth and Electrical Characterization of Single-Crystal Graphene and Bilayer

报告人郝玉峰   博士 (美国哥伦比亚大学机械工程系

报告时间130日(星期五)上午0930

报告地点:物理科技楼101

报告摘要

Controllable growth of high quality, large area single-crystal graphene and bilayer graphene is critical for high-end applications in electronics and photonics. The discovery of graphene growth on copper by Chemical Vapor Deposition (CVD) has led to the polycrystalline large area films. In this talk, we presented two key mechanisms that are fundamentally important for graphene growth on Cu. (1) We discovered that oxygen (O) on the Cu surface substantially decreased the graphene nucleation density by passivating Cu surface active sites. Control of surface O enabled growth of centimeter-scale single-crystal graphene domains. O also accelerated graphene domain growth and shifted the growth kinetics from edge-attachment–limited to diffusion-limited. Correspondingly, the compact graphene domain shapes became dendritic. (2) We established a new growth mechanism that can control the Bernal-stacking ordering of two graphene layers, the synthesized single-crystal bilayer graphene domain can be as large as 500 micrometers, and more than 80% is of Bernal-stacking. Electrical transport property measurements also show outstanding carrier mobility over 60,02v-1s-1 for both graphene and bilayer on Hexagonal Boron Nitride substrate. Particularly, we observed Bandgap ~100meV at a displacement field of 0.9V/nm in the CVD bilayer graphene. Our works will meet the potentials of graphene in various applications.


报告人简介

20017月毕业于山西大学物理系国家理科基地班,获得学士学位;20066月博士毕业于中国科学院固体物理研究所。从2007年至2014年,郝玉峰先后在新加坡国立大学和美国得克萨斯大学奥斯丁分校从事博士后工作;20141月至今在美国哥伦比亚大学担任研究科学家。过去十年来,郝玉峰尤其专注于化学气相沉积合成新材料领的研究工作,对石墨烯等二维材料以及一维半导体纳米线的生长及结构表征方面取得了一系列研究成果;另外,郝玉峰在纳米材料光、电性质测量方面也做了一系列工作。

迄今为止,郝玉峰在国际学术期刊共发表论文50余篇,包括ScienceNaturePhysical Review Letters Advanced MaterialsNano LettersACS NanoPhysical Review B等;申请中国及美国发明专利4项;到目前为止所发表论文累计被ScienceNature等国际学术刊物引用2100余次(H因子26)。

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